FDC3612 mosfet equivalent, n-channel mosfet.
* 2.6 A, 100 V RDS(ON) = 125 mΩ @ VGS = 10 V RDS(ON) = 135 mΩ @ VGS = 6 V
Applications
* DC/DC converter
* High performance trench technology for extremely .
* DC/DC converter
* High performance trench technology for extremely low RDS(ON)
* Low gate charge (14nC ty.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
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